Si4483EDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 30
R DS(on) ( Ω )
0.0085 at V GS = - 10 V
0.014 at V GS = - 4.5 V
I D (A)
- 14
- 11
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? ESD Protection: 3000 V
APPLICATIONS
? Notebook PC
- Load Switch
- Adapter Switch
SO-8
S
S
S
S
1
2
3
8
7
6
D
D
D
G
4
5
D
G
7100 Ω
Top View
Ordering Information: Si4483EDY-T1 - E3 (Lead (Pb)-free)
Si4483EDY-T1 -G E3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
P-Channel
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
- 30
± 25
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 70 °C
I D
I DM
- 14
- 11
- 50
- 10
-8
A
Continuous Source Current (Diode Conduction) a
I S
- 2.7
- 1.36
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
P D
T J , T stg
3.0
1.9
- 55 to 150
1.5
0.95
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJF
33
70
16
42
85
21
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72862
S-83038-Rev. D, 22-Dec-08
www.vishay.com
1
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